Description
Product Type
NVMe SSD
NAND Flash
Samsung V-NAND 3-bit MLC
Interface
PCIe Gen 3.0 x 4, NVMe 1.3
Read/Write Speeds
3,500/3,300 MB/s
Capacity
1,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Key Features
Sequential Read Speed
Up to 3,500 MB/s * Performance may vary based on system hardware & configuration
Random Write Speed
Random Write (4KB, QD32): Up to 550,000 IOPS; Random Write (4KB, QD1): Up to 60,000 IOPS * Performance may vary based on system hardware & configuration
Sequential Read Speed
Up to 3,500 MB/s * Performance may vary based on system hardware & configuration
Random Read Speed
Random Read (4KB, QD32): Up to 600,000 IOPS; Random Read (4KB, QD1): Up to 19,000 IOPS * Performance may vary based on system hardware & configuration
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